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The Raw Silicon Wafer
Specifications: 3 inch to 4 inch monocrystalline silicon N light silicon chip, 3 inch to 4 inch silicon N/P type silicon wafer

By adding phosphorus or boron doped, using MCZ technology, the production size is 3 inch, 4 inch, 0.003-55 resistor.Cm, 200-350um thickness of different type N or type P monocrystalline silicon wafer, and silicon wafer edge positioning production according to customer requirements, chamfered silicon, N silicon, P silicon etc. the resistivity and thickness, production according to customer requirements.


3-inch mono crystal silicon N-type light doped wafer

ResistivityΩ·CM

Thicknessμm

Crystal Orientation

Lifeμs

External Diametermm

Dopant

Form

Radial uniformitty of resistivity

AS cut

Lapping

Chamfering

Flattingiece

5-10

200-350

<111>

100

76.2±0.3

Phosphorus

20%

10-15

200-350

<111>

100

76.2±0.3

Phosphorus

20%

15-20

200-350

<111>

100

76.2±0.3

Phosphorus

20%

20-25

200-350

<111>

100

76.2±0.3

Phosphorus

20%

25-30

200-350

<111>

100

76.2±0.3

Phosphorus

20%

30-35

200-350

<111>

100

76.2±0.3

Phosphorus

20%

35-40

200-350

<111>

100

76.2±0.3

Phosphorus

20%

40-45

200-350

<111>

100

76.2±0.3

Phosphorus

20%

45-50

200-350

<111>

100

76.2±0.3

Phosphorus

20%

50-55

200-350

<111>

100

76.2±0.3

Phosphorus

20%

4-inch mono crystal silicon N-type light doped wafer

ResistivityΩ·CM

Thicknessμm

Crystal Orientation

Lifeμs

External Diametermm

Dopant

Form

Radial uniformitty of resistivity

AS cut

Lapping

Chamfering

Flattingiece

5-10

200-350

<111>

100

101.6±0.3

Phosphorus

20%

10-15

200-350

<111>

100

101.6±0.3

Phosphorus

20%

15-20

200-350

<111>

100

101.6±0.3

Phosphorus

20%

20-25

200-350

<111>

100

101.6±0.3

Phosphorus

20%

25-30

200-350

<111>

100

101.6±0.3

Phosphorus

20%

30-35

200-350

<111>

100

101.6±0.3

Phosphorus

20%

35-40

200-350

<111>

100

101.6±0.3

Phosphorus

20%

40-45

200-350

<111>

100

101.6±0.3

Phosphorus

20%

45-50

200-350

<111>

100

101.6±0.3

Phosphorus

20%

50-55

200-350

<111>

100

101.6±0.3

Phosphorus

20%

3-inch mono crystal silicon heavy doped wafer

ResistivityΩ·CM

Thicknessμm

Crystal Orientation

Model

External Diametermm

Dopant

Form

Radial uniformitty of resistivity

AS cut

Lapping

Chamfering

Flattingiece

0.003-0.005

200-350

<111>

N/P

76.2±0.3

Phosphorus/Boron

/

/

0.005-0.008

200-350

<111>

N/P

76.2±0.3

Phosphorus/Boron

/

/

0.02-0.03

200-350

<111>

N/P

76.2±0.3

Phosphorus/Boron

/

/

4 inch monocrystal silicon heavy doped wafer

ResistivityΩ·CM

Thicknessμm

Crystal Orientation

Model

External Diametermm

Dopant

Form

Radial uniformitty of resistivity

AS cut

Lapping

Chamfering

Flattingiece

0.003-0.005

200-350

<111>

N/P

101.6±0.3

Phosphorus/Boron

/

/

0.005-0.008

200-350

<111>

N/P

101.6±0.3

Phosphorus/Boron

/

/

0.02-0.03

200-350

<111>

N/P

101.6±0.3

Phosphorus/Boron

/

/